2007-09-01 rev.2.2 page 1 idb30e120 fast switching emcon diode product summary v rrm 1200 v i f 30 a v f 1.65 v t j max 150 c feature ? 1200 v emcon technology ? fast recovery ? soft switching ? low reverse recovery charge ? low forward voltage ? easy paralleling pg-to263-3-2 pin 1 pin 2 pin 3 nc c a marking d30e120 type package ordering code idb30e120 pg-to263-3-2 - maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit repetitive peak reverse voltage v rrm 1200 v continous forward current t c =25c t c =90c i f 50 30 a surge non repetitive forward current t c =25c, t p =10 ms, sine halfwave i fsm 102 maximum repetitive forward current t c =25c, t p limited by t jmax , d =0.5 i frm 76.5 power dissipation t c =25c t c =90c p tot 138 66 w operating and storage temperature t j , t st g -55...+150 c soldering temperature reflow soldering, msl1 t s 245 c
2007-09-01 rev.2.2 page 2 idb30e120 thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - case r thjc - - 0.9 k/w thermal resistance, junction - ambient, leaded r thja - - 62 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 1) r thja - - - 35 62 - electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics reverse leakage current v r =1200v, t j =25c v r =1200v, t j =150c i r - - - - 100 2500 a forward voltage drop i f =30a, t j =25c i f =30a, t j =150c v f - - 1.65 1.7 2.15 - v 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
2007-09-01 rev.2.2 page 3 idb30e120 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics reverse recovery time v r =800v, i f =30a, d i f /dt =850a/s, t j =25c v r =800v, i f =30a, d i f /dt =850a/s, t j =125c v r =800v, i f =30a, d i f /dt =850a/s, t j =150c t rr - - - 243 355 380 - - - ns peak reverse current v r =800v, i f = 30 a, d i f /dt =850a/s, t j =25c v r =800v, i f =30a, d i f /dt =850a/s, t j =125c v r =800v, i f =30a, d i f /dt =850a/s, t j =150c i rrm - - - 23.7 28.3 29.5 - - - a reverse recovery charge v r =800v, i f =30a, d i f /dt =850a/s, t j =25c v r =800v, i f =30a, d i f /dt =850a/s, t j =125c v r =800v, i f =30a, d i f /dt =850a/s, t j =150c q rr - - - 2630 4700 5200 - - - nc reverse recovery softness factor v r =800v, i f =30a, d i f /dt =850a/s, t j =25c v r =800v, i f =30a, d i f /dt =850a/s, t j =125c v r =800v, i f =30a, d i f /dt =850a/s, t j =150c s - - - 6 7.4 7.5 - - -
2007-09-01 rev.2.2 page 4 idb30e120 2 diode forward current i f = f( t c ) parameter: t j 150c 25 50 75 100 c 150 t c 0 5 10 15 20 25 30 35 40 45 a 55 i f 1 power dissipation p tot = f ( t c ) parameter: t j 150c 25 50 75 100 c 150 t c 0 10 20 30 40 50 60 70 80 90 100 110 120 w 140 p tot 3 typ. diode forward current i f = f ( v f ) 0 0.5 1 1.5 2 v 3 v f 0 10 20 30 40 50 60 70 a 90 i f -55c 25c 100c 150c 4 typ. diode forward voltage v f = f ( t j ) -60 -20 20 60 100 c 160 t j 1.2 1.4 1.6 1.8 2 v 2.4 v f 15a 30a 60a
2007-09-01 rev.2.2 page 5 idb30e120 5 typ. reverse recovery time t rr = f (d i f /d t ) parameter: v r = 800v, t j = 125c 200 300 400 500 600 700 800 a/s 1000 d i f /d t 200 300 400 500 600 700 800 900 ns 1100 t rr 60a 30a 15a 6 typ. reverse recovery charge q rr = f (d i f /d t ) parameter: v r = 800v, t j = 125 c 200 300 400 500 600 700 800 a/s 1000 d i f /d t 2500 3000 3500 4000 4500 5000 5500 nc 6500 q rr 15a 30a 60a 7 typ. reverse recovery current i rr = f (d i f /d t ) parameter: v r = 800v, t j = 125c 200 300 400 500 600 700 800 a/s 1000 d i f /d t 5 10 15 20 25 a 35 i rr 60a 30a 15a 8 typ. reverse recovery softness factor s = f(d i f /d t ) parameter: v r = 800v, t j = 125c 200 300 400 500 600 700 800 a/s 1000 d i f /d t 4 6 8 10 12 14 18 s 60a 30a 15a
2007-09-01 rev.2.2 page 6 idb30e120 9 max. transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w idp30e120 z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
2007-09-01 rev.2.2 page 7 idb30e120
2007-09-01 rev.2.2 page 8 idb30e120 published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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